- 新型電晶體的開關時間縮短為三分之一.
Switching time of the new type transistor is shortened 3 times.
- InAs/InP_(0.7)Sb_(0.3)熱電子電晶體的電流增益及最高收集極電壓
Current Gain and Maximum Collector Voltage of InAs/InP_(0.7)Sb_(0.3) HET
- Ka波段高電子遷移率電晶體的研製
Development of Ka-Band High Electron Mobility Transistor
- 新型電晶體的開關時間縮短了五分之四。
Switching time of the new-type transistor is shortened five times.
- 隨著電晶體的發展,電子設備體積急劇縮小。
With the development of transistor, electronic devices shrink tremendously.
- 複合電晶體的電泳法玻璃鈍化研究
On Glass Passivation by Electrophoresis in Darlington Production
- 新型電晶體的開關時間縮短了三分之二。(或---縮短為三分之一。)
The switching time of the new-type transistor is shortened three times .
- Bi-CMOS雙極型電晶體的研製
Development of a Bi-CMOS Bipolar Transistor